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Introduction
Spin-orbit torque (SOT) switching is a promising technique for achieving fast and energy-efficient magnetic switching in non-volatile memory devices. This phenomenon arises from the interaction between the electron’s spin and its orbital motion, leading to a transfer of spin angular momentum to the magnetic moment of a ferromagnetic layer. The manipulation of magnetic memory states through SOT has attracted significant attention in recent years due to its potential for reducing the energy consumption and improving the speed of data storage and retrieval.

Chapter 1: Introduction
1.1 Introduction
1.2 Background of study
1.3 Problem Statement
1.4 Objective of study
1.5 Limitation of study
1.6 Scope of study
1.7 Significance of study
1.8 Structure of the Thesis
1.9 Definition of terms

Chapter 2: Literature Review
2.1 Overview of Spin-orbit torque (SOT)
2.2 Spin Hall Effect (SHE)
2.3 Rashba effect
2.4 Dzyaloshinskii-Moriya Interaction (DMI)
2.5 Recent advancements in SOT switching
2.6 Comparison with other magnetic switching techniques
2.7 Challenges in SOT switching
2.8 Materials for SOT devices
2.9 Device architectures utilizing SOT
2.10 Applications of SOT in magnetic memories

Chapter 3: System Design and Methodology
3.1 Design considerations for SOT devices
3.2 Simulation techniques for studying SOT effects
3.3 Fabrication process for SOT devices
3.4 Characterization methods for SOT devices
3.5 Measurement of SOT efficiency
3.6 Optimization of SOT switching parameters
3.7 Integration of SOT devices in memory arrays
3.8 Reliability and endurance of SOT-based memories

Chapter 4: System Implementation
4.1 Materials selection for SOT devices
4.2 Device fabrication process
4.3 Measurement setup for SOT switching experiments
4.4 Data analysis and interpretation
4.5 Demonstration of SOT switching in memory cells
4.6 Performance evaluation of SOT-based memories
4.7 Comparison with conventional magnetic memory technologies
4.8 Future prospects and challenges in SOT-based memories

Chapter 5: Conclusion and Summary
In this final chapter, we will summarize the key findings of this thesis on Spin-orbit torque switching in magnetic memories. We will discuss the implications of our results, potential future research directions, and the significance of SOT in the field of magnetic memory technology.

Thesis Overview on Spin-orbit torque switching in magnetic memories

Spin-orbit torque (SOT) switching has emerged as a promising technique for achieving fast and energy-efficient magnetic switching in non-volatile memory devices. This thesis aims to investigate the fundamental principles, device designs, and applications of SOT in magnetic memories. The introduction provides a comprehensive overview of the background, problem statement, objectives, scope, and significance of the study. A detailed literature review covers the theoretical foundations of SOT, key phenomena such as the Spin Hall Effect and Rashba effect, recent advancements, challenges, materials, architectures, and applications of SOT in memory devices.

The system design and methodology chapter outline the design considerations, simulation techniques, fabrication processes, characterization methods, and optimization strategies for SOT devices. The following chapter on system implementation discusses the material selection, fabrication process, measurement setup, data analysis, performance evaluation, and future prospects of SOT-based memories. Finally, the conclusion and summary chapter wraps up the thesis by summarizing the key findings, discussing their implications, and outlining potential future research directions in the field of Spin-orbit torque switching in magnetic memories.

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