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Introduction:

Spin-orbit torque magnetic random access memory (SOT-MRAM) is a promising emerging non-volatile memory technology that has gained significant attention in recent years due to its potential for high speed, low power consumption, and non-volatility. SOT-MRAM operates on the principle of manipulating the magnetic state of a ferromagnetic layer using spin-orbit torque generated by an electric current passing through a heavy metal layer. This technology offers a viable alternative to traditional magnetic memory technologies such as spin-transfer torque magnetic random access memory (STT-MRAM) and magnetic tunnel junctions (MTJs). In this thesis, we present a comprehensive study on the design, implementation, and evaluation of SOT-MRAM for future memory applications.

Table of Contents:

1. Introduction
1.1 Introduction
1.2 Background of the study
1.3 Problem Statement
1.4 Objective of the study
1.5 Limitation of the study
1.6 Scope of the study
1.7 Significance of the study
1.8 Structure of the Thesis
1.9 Definition of Terms

2. Literature Review
2.1 Overview of MRAM technologies
2.2 Spin-orbit torque phenomenon
2.3 SOT-MRAM architecture
2.4 Device performance metrics
2.5 Recent advancements in SOT-MRAM research
2.6 Challenges and opportunities in SOT-MRAM technology
2.7 Comparison with other non-volatile memory technologies
2.8 Applications of SOT-MRAM
2.9 Future prospects of SOT-MRAM
2.10 Conclusion

3. System Design and Methodology
3.1 System requirements analysis
3.2 Design considerations for SOT-MRAM
3.3 Selection of materials and fabrication techniques
3.4 Device modeling and simulation
3.5 Integration with memory controller
3.6 Testing and evaluation methodologies
3.7 Data retention and endurance testing
3.8 Performance optimization techniques

4. System Implementation
4.1 Fabrication process overview
4.2 Device layout and integration
4.3 Measurement setup and calibration
4.4 Characterization of SOT-MRAM devices
4.5 Performance analysis and benchmarking
4.6 Reliability and stability testing
4.7 Error correction mechanisms
4.8 Power consumption analysis

5. Conclusion and Summary
5.1 Recap of key findings
5.2 Implications for future research
5.3 Limitations and challenges
5.4 Conclusion and recommendations
5.5 Contribution to the field of SOT-MRAM

Thesis Overview on Spin-orbit torque magnetic random access memory:

Spin-orbit torque magnetic random access memory (SOT-MRAM) is a novel non-volatile memory technology that holds great promise for next-generation electronics. This thesis aims to provide a comprehensive study on the design, implementation, and evaluation of SOT-MRAM for advanced memory applications. The introduction section sets the stage by presenting the background, problem statement, objectives, limitations, scope, significance, and structure of the thesis. The literature review delves into the various aspects of MRAM technologies, spin-orbit torque phenomenon, SOT-MRAM architecture, device performance metrics, recent advancements, challenges, applications, and future prospects. The system design and methodology chapter discusses system requirements analysis, design considerations, material selection, modeling, integration, testing methodologies, and performance optimization techniques. The system implementation chapter covers the fabrication process, device layout, measurement setup, characterization, performance analysis, reliability testing, error correction, and power consumption analysis. The conclusion and summary chapter provides a recap of key findings, implications for future research, limitations, challenges, and recommendations. This thesis makes a significant contribution to the field of SOT-MRAM research and facilitates the advancement of non-volatile memory technologies for next-generation electronics.

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